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| 2N4123, 2N4124 General Purpose Transistors NPN Silicon Features http://onsemi.com COLLECTOR 3 2 BASE 1 EMITTER * Pb-Free Packages are Available* MAXIMUM RATINGS Rating Collector-Emitter Voltage 2N4123 2N4124 Collector-Base Voltage 2N4123 2N4124 Emitter-Base Voltage Collector Current - Continuous Total Device Dissipation @ TA = 25C Derate above 25C Total Device Dissipation @ TC = 25C Derate above 25C Operating and Storage Junction Temperature Range VEBO IC PD PD TJ, Tstg VCBO 40 30 5.0 200 625 5.0 1.5 12 -55 to +150 Vdc mAdc mW mW/C W mW/C C TO-92 CASE 29 STYLE 1 12 Symbol VCEO 30 25 Vdc Value Unit Vdc 1 3 STRAIGHT LEAD BULK PACK THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Case Symbol RqJA RqJC Max 200 83.3 Unit C/W C/W MPS 412x AYWW G G 3 BENT LEAD TAPE & REEL AMMO PACK 2 MARKING DIAGRAM Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. x = 3 or 4 A = Assembly Location Y = Year WW = Work Week G = Pb-Free Package (Note: Microdot may be in either location) ORDERING INFORMATION Device 2N4123RLRM 2N4124G Package TO-92 TO-92 (Pb-Free) Shipping 2000 / Tape & Ammo 5000 Units / Bulk *For additional information on our Pb-Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. (c) Semiconductor Components Industries, LLC, 2007 For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. Publication Order Number: 2N4123/D 1 March, 2007 - Rev. 3 2N4123, 2N4124 ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) Characteristic OFF CHARACTERISTICS Collector-Emitter Breakdown Voltage (Note 1) (IC = 1.0 mAdc, IE = 0) Collector-Base Breakdown Voltage (IC = 10 mAdc, IE = 0) Emitter-Base Breakdown Voltage (IE = 10 mAdc, IC = 0) Collector Cutoff Current (VCB = 20 Vdc, IE = 0) Emitter Cutoff Current (VEB = 3.0 Vdc, IC = 0) ON CHARACTERISTICS DC Current Gain (Note 1) (IC = 2.0 mAdc, VCE = 1.0 Vdc) (IC = 50 mAdc, VCE = 1.0 Vdc) Collector-Emitter Saturation Voltage (Note 1) (IC = 50 mAdc, IB = 5.0 mAdc) Base-Emitter Saturation Voltage (Note 1) (IC = 50 mAdc, IB = 5.0 mAdc) SMALL-SIGNAL CHARACTERISTICS Current-Gain - Bandwidth Product (IC = 10 mAdc, VCE = 20 Vdc, f = 100 MHz) Input Capacitance (VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz) Collector-Base Capacitance (IE = 0, VCB = 5.0 V, f = 1.0 MHz) Small-Signal Current Gain (IC = 2.0 mAdc, VCE = 10 Vdc, RS = 10 k W, f = 1.0 kHz) Current Gain - High Frequency (IC = 10 mAdc, VCE = 20 Vdc, f = 100 MHz) (IC = 2.0 mAdc, VCE = 10 V, f = 1.0 kHz) (IC = 2.0 mAdc, VCE = 10 V, f = 1.0 kHz) Noise Figure (IC = 100 mAdc, VCE = 5.0 Vdc, RS = 1.0 k W, f = 1.0 kHz) 1. Pulse Test: Pulse Width = 300 ms, Duty Cycle = 2.0%. 2N4123 2N4124 |hfe| 2N4123 2N4124 2N4123 2N4124 NF 2N4123 2N4124 - - 6.0 5.0 2.5 3.0 50 120 - - 200 480 dB fT 2N4123 2N4124 Cibo - Ccb - hfe 50 120 200 480 - 4.0 - 8.0 pF 250 300 - - pF MHz hFE 2N4123 2N4124 2N4123 2N4124 VCE(sat) - VBE(sat) - 0.95 0.3 Vdc 50 120 25 60 150 360 - - Vdc - V(BR)CEO 2N4123 2N4124 V(BR)CBO 2N4123 2N4124 V(BR)EBO 5.0 ICBO - IEBO - 50 50 nAdc - nAdc 40 30 - - Vdc 30 25 - - Vdc Vdc Symbol Min Max Unit http://onsemi.com 2 2N4123, 2N4124 10 7.0 CAPACITANCE (pF) 5.0 Cibo TIME (ns) 200 100 70 50 30 20 10.0 7.0 1.0 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 REVERSE BIAS VOLTAGE (VOLTS) 20 30 40 5.0 1.0 VCC = 3 V IC/IB = 10 VEB(off) = 0.5 V 2.0 3.0 5.0 7.0 10 20 30 50 70 100 IC, COLLECTOR CURRENT (mA) 200 tf tr td ts 3.0 2.0 Cobo Figure 1. Capacitance Figure 2. Switching Times AUDIO SMALL-SIGNAL CHARACTERISTICS NOISE FIGURE (VCE = 5 Vdc, TA = 25C) Bandwidth = 1.0 Hz 12 10 NF, NOISE FIGURE (dB) 8 6 4 2 0 0.1 SOURCE RESISTANCE = 200 W IC = 1 mA NF, NOISE FIGURE (dB) SOURCE RESISTANCE = 200 W IC = 0.5 mA SOURCE RESISTANCE = 1 kW IC = 50 mA 14 f = 1 kHz 12 10 8 6 4 2 20 40 100 0 0.1 0.2 0.4 1.0 2.0 4.0 10 20 RS, SOURCE RESISTANCE (kW) 40 100 IC = 1 mA IC = 0.5 mA IC = 50 mA IC = 100 mA SOURCE RESISTANCE = 500 W IC = 100 mA 0.2 0.4 1 2 4 10 f, FREQUENCY (kHz) Figure 3. Frequency Variations Figure 4. Source Resistance http://onsemi.com 3 2N4123, 2N4124 h PARAMETERS (VCE = 10 V, f = 1 kHz, TA = 25C) 300 hoe , OUTPUT ADMITTANCE (m mhos) 5.0 10 100 50 20 10 5 2 1 0.1 0.2 0.5 1.0 2.0 IC, COLLECTOR CURRENT (mA) hfe , CURRENT GAIN 200 100 70 50 30 0.1 0.2 0.5 1.0 2.0 IC, COLLECTOR CURRENT (mA) 5.0 10 Figure 5. Current Gain 20 hie , INPUT IMPEDANCE (k ) 10 5.0 2.0 1.0 0.5 0.2 10 7.0 5.0 3.0 2.0 Figure 6. Output Admittance h re , VOLTAGE FEEDBACK RATIO (X 10-4 ) 0.1 0.2 0.5 1.0 2.0 IC, COLLECTOR CURRENT (mA) 5.0 10 1.0 0.7 0.5 0.1 0.2 0.5 1.0 2.0 IC, COLLECTOR CURRENT (mA) 5.0 10 Figure 7. Input Impedance Figure 8. Voltage Feedback Ratio STATIC CHARACTERISTICS 2.0 TJ = +125C 1.0 0.7 0.5 0.3 0.2 -55C +25C VCE = 1 V h FE , DC CURRENT GAIN (NORMALIZED) 0.1 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 IC, COLLECTOR CURRENT (mA) 20 30 50 70 100 200 Figure 9. DC Current Gain http://onsemi.com 4 2N4123, 2N4124 VCE , COLLECTOR EMITTER VOLTAGE (VOLTS) 1.0 TJ = 25C 0.8 IC = 1 mA 10 mA 30 mA 100 mA 0.6 0.4 0.2 0 0.01 0.02 0.03 0.05 0.07 0.1 0.2 0.3 0.5 IB, BASE CURRENT (mA) 0.7 1.0 2.0 3.0 5.0 7.0 10 Figure 10. Collector Saturation Region TJ = 25C 1.0 V, VOLTAGE (VOLTS) 0.8 VBE @ VCE = 1 V 0.6 0.4 VCE(sat) @ IC/IB = 10 0.2 0 VBE(sat) @ IC/IB = 10 V, TEMPERATURE COEFFICIENTS (mV/C) 1.2 1.0 0.5 0 -0.5 -1.0 -1.5 -2.0 qVB for VBE(sat) -55C to +25C +25C to +125C qVC for VCE(sat) -55C to +25C +25C to +125C 1.0 2.0 5.0 10 20 50 IC, COLLECTOR CURRENT (mA) 100 200 0 20 40 60 80 100 120 140 160 IC, COLLECTOR CURRENT (mA) 180 200 Figure 11. "On" Voltages Figure 12. Temperature Coefficients http://onsemi.com 5 2N4123, 2N4124 PACKAGE DIMENSIONS TO-92 (TO-226) CASE 29-11 ISSUE AM A R P L SEATING PLANE NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. CONTOUR OF PACKAGE BEYOND DIMENSION R IS UNCONTROLLED. 4. LEAD DIMENSION IS UNCONTROLLED IN P AND BEYOND DIMENSION K MINIMUM. DIM A B C D G H J K L N P R V INCHES MIN MAX 0.175 0.205 0.170 0.210 0.125 0.165 0.016 0.021 0.045 0.055 0.095 0.105 0.015 0.020 0.500 --- 0.250 --- 0.080 0.105 --- 0.100 0.115 --- 0.135 --- MILLIMETERS MIN MAX 4.45 5.20 4.32 5.33 3.18 4.19 0.407 0.533 1.15 1.39 2.42 2.66 0.39 0.50 12.70 --- 6.35 --- 2.04 2.66 --- 2.54 2.93 --- 3.43 --- B STRAIGHT LEAD BULK PACK K XX G H V 1 D J C SECTION X-X N N R A B BENT LEAD TAPE & REEL AMMO PACK P T SEATING PLANE NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. CONTOUR OF PACKAGE BEYOND DIMENSION R IS UNCONTROLLED. 4. LEAD DIMENSION IS UNCONTROLLED IN P AND BEYOND DIMENSION K MINIMUM. DIM A B C D G J K N P R V MILLIMETERS MIN MAX 4.45 5.20 4.32 5.33 3.18 4.19 0.40 0.54 2.40 2.80 0.39 0.50 12.70 --- 2.04 2.66 1.50 4.00 2.93 --- 3.43 --- STYLE 1: PIN 1. EMITTER 2. BASE 3. COLLECTOR K XX G D J V C SECTION X-X N 1 ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. "Typical" parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor P.O. Box 5163, Denver, Colorado 80217 USA Phone: 303-675-2175 or 800-344-3860 Toll Free USA/Canada Fax: 303-675-2176 or 800-344-3867 Toll Free USA/Canada Email: orderlit@onsemi.com N. American Technical Support: 800-282-9855 Toll Free USA/Canada Europe, Middle East and Africa Technical Support: Phone: 421 33 790 2910 Japan Customer Focus Center Phone: 81-3-5773-3850 ON Semiconductor Website: www.onsemi.com Order Literature: http://www.onsemi.com/orderlit For additional information, please contact your local Sales Representative http://onsemi.com 6 2N4123/D |
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